Argon ions deeply implanted in silicon studied by Rutherford/Elastic Backscattering and Grazing Incidence X-ray Fluorescence spectroscopy

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Title:	Argon ions deeply implanted in silicon studied by Rutherford/Elastic Backscattering and Grazing Incidence X-ray Fluorescence spectroscopy
Authors:	Kokkoris, Michael; Androulakaki, Effrossyni G.; Czyzycki, Mateusz; Erich, Marko ; Karydas, Andreas G.; Leani, Juan J.; Migliori, Alessandro; Ntemou, Eleni; Paneta, Valentina; Petrović, Srđan M.
Issue Date:	2019
Publication:	Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
ISSN:	0168-583X Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms Search Idenfier 1872-9584 Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms Search Idenfier
Type:	Conference Paper
Collation:	vol. 450 str. 144-148
DOI:	10.1016/j.nimb.2018.08.048
WoS-ID:	000474501400030
Scopus-ID:	2-s2.0-85053018989
URI:	https://vinar.vin.bg.ac.rs/handle/123456789/8396 https://enauka.gov.rs/handle/123456789/351171
Project:	IAEA CRP-G42005 'Experiments with Synchrotron Radiation for Modern Environmental and Industrial Applications [18262]
Metadata source:	(Preuzeto iz Nasi u WoS)
M-category:	Mp. category will be shown later

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