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eNauka >  Rezultati >  Argon ions deeply implanted in silicon studied by Rutherford/Elastic Backscattering and Grazing Incidence X-ray Fluorescence spectroscopy
Naziv: Argon ions deeply implanted in silicon studied by Rutherford/Elastic Backscattering and Grazing Incidence X-ray Fluorescence spectroscopy
Autori: Kokkoris, Michael; Androulakaki, Effrossyni G.; Czyzycki, Mateusz; Erich, Marko  ; Karydas, Andreas G.; Leani, Juan J.; Migliori, Alessandro; Ntemou, Eleni; Paneta, Valentina; Petrović, Srđan M.  
Godina: 2019
Publikacija: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
ISSN: 0168-583X Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms Pretraži identifikator
1872-9584 Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms Pretraži identifikator
Tip rezultata: Konferencijski rad
Kolacija: vol. 450 str. 144-148
DOI: 10.1016/j.nimb.2018.08.048
WoS-ID: 000474501400030
Scopus-ID: 2-s2.0-85053018989
URI: https://vinar.vin.bg.ac.rs/handle/123456789/8396
https://enauka.gov.rs/handle/123456789/351171
Projekat: IAEA CRP-G42005 'Experiments with Synchrotron Radiation for Modern Environmental and Industrial Applications [18262]
Izvor metapodataka: (Preuzeto iz Nasi u WoS)
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