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Argon ions deeply implanted in silicon studied by Rutherford/Elastic Backscattering and Grazing Incidence X-ray Fluorescence spectroscopy
| Naziv: | Argon ions deeply implanted in silicon studied by Rutherford/Elastic Backscattering and Grazing Incidence X-ray Fluorescence spectroscopy | Autori: | Kokkoris, Michael; Androulakaki, Effrossyni G.; Czyzycki, Mateusz; Erich, Marko |
Godina: | 2019 | Publikacija: | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | ISSN: | 0168-583X Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms Pretraži identifikator1872-9584 Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms Pretraži identifikator |
Tip rezultata: | Konferencijski rad | Kolacija: | vol. 450 str. 144-148 | DOI: | 10.1016/j.nimb.2018.08.048 | WoS-ID: | 000474501400030 | Scopus-ID: | 2-s2.0-85053018989 | URI: | https://vinar.vin.bg.ac.rs/handle/123456789/8396 https://enauka.gov.rs/handle/123456789/351171 |
Projekat: | IAEA CRP-G42005 'Experiments with Synchrotron Radiation for Modern Environmental and Industrial Applications [18262] | Izvor metapodataka: | (Preuzeto iz Nasi u WoS) | M-kategorija: | Mp kategorija će biti prikazana naknadno. |
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