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eNauka >  Rezultati >  Annealing of radiation-induced defects in burn-in stressed power VDMOSFETs
Naziv: Annealing of radiation-induced defects in burn-in stressed power VDMOSFETs
Autori: Đorić-Veljković, Snežana  ; Manić, Ivica  ; Davidović, Vojkan  ; Danković, Danijel  ; Golubović, Snežana ; Stojadinović, Ninoslav 
Godina: 2011
Publikacija: Nuclear Technology & Radiation Protection
ISSN: 1451-3994 Nuclear technology and radiation protection Pretraži identifikator
Izdavač: Belgrade : Vinča Institute of Nuclear Sciences
Tip rezultata: Naučni članak
Kolacija: vol. 26 br. 1 str. 18-24
DOI: 10.2298/NTRP1101018D
WoS-ID: 000290121000003
Scopus-ID: 2-s2.0-79958218364
VBS COBISS: 40361487
URI: https://enauka.gov.rs/handle/123456789/432682
http://vbs.rs/scripts/cobiss?command=DISPLAY&base=70036&RID=40361487
https://plus.cobiss.net/cobiss/sr/sr/bib/40361487#izum.si
Projekat: Ministry of Science and Technological Development of Republic of Serbia
M-kategorija: 
22M22 - Međunarodni časopis kategorije M22

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