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eNauka >  Results >  Interface and oxide state behaviors of commercial n-channel power MOSFETs during high electric field stress and thermal annealing at 150 °C
Title: Interface and oxide state behaviors of commercial n-channel power MOSFETs during high electric field stress and thermal annealing at 150 °C
Authors: Ristić, Goran  ; Vasović, Nikola D
Issue Date: 2011
Publication: Semiconductor Science and Technology
ISSN: 0268-1242 Semiconductor Science and Technology Search Idenfier
Type: Article
Collation: vol. 26 br. 8 str. 085019-085019
DOI: 10.1088/0268-1242/26/8/085019
WoS-ID: 000293895900020
Scopus-ID: 2-s2.0-80051960428
URI: https://enauka.gov.rs/handle/123456789/446508
Metadata source: Migrirano iz RIS podataka
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