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Interface and oxide state behaviors of commercial n-channel power MOSFETs during high electric field stress and thermal annealing at 150 °C
| Title: | Interface and oxide state behaviors of commercial n-channel power MOSFETs during high electric field stress and thermal annealing at 150 °C | Authors: | Ristić, Goran |
Issue Date: | 2011 | Publication: | Semiconductor Science and Technology | ISSN: | 0268-1242 Semiconductor Science and Technology Search Idenfier |
Type: | Article | Collation: | vol. 26 br. 8 str. 085019-085019 | DOI: | 10.1088/0268-1242/26/8/085019 | WoS-ID: | 000293895900020 | Scopus-ID: | 2-s2.0-80051960428 | URI: | https://enauka.gov.rs/handle/123456789/446508 | Metadata source: | Migrirano iz RIS podataka | M-category: | 21M21 |
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