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Comparison of Radiation Characteristics of HfO2 and SiO2 Incorporated in MOS Capacitor in Field of Gamma and X Radiation
| Title: | Comparison of Radiation Characteristics of HfO2 and SiO2 Incorporated in MOS Capacitor in Field of Gamma and X Radiation | Authors: | Stanković, Srboljub J.   ; Nikolić, Dragana ; Kržanović, Nikola ; Nađđerđ, Laslo ; Davidović, Vojkan S. |
Issue Date: | 2019 | Publication: | 2019 IEEE 31st International Conference on Microelectronics (MIEL) | Publisher: | IEEE | Type: | Conference Paper | ISBN: | 978-1-7281-3419-2  Search Idenfier |
Collation: | str. 181-184 | DOI: | 10.1109/MIEL.2019.8889613 | WoS-ID: | 000565455600038 | Scopus-ID: | 2-s2.0-85075333653 | URI: | https://vinar.vin.bg.ac.rs/handle/123456789/8659 https://ieeexplore.ieee.org/document/8889613/ https://enauka.gov.rs/handle/123456789/510475 |
URL: | https://ieeexplore.ieee.org/document/8889613/ | Project: | Ministry of Education and Science of the Republic of Serbia | M-category: | Mp. category will be shown later |
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