Results
eNauka >
Results >
Comparative analysis of the switching energy losses in GaN HEMT and silicon MOSFET power transistors
| Title: | Comparative analysis of the switching energy losses in GaN HEMT and silicon MOSFET power transistors | Authors: | Jovan Mrvić   ; Vladimir Dj. Vukić |
Issue Date: | 2020 | Publication: | Proceedings, Electrical Engineering Institute "Nikola Tesla" / Zbornik radova, Elektrotehnički institut "Nikola Tesla" 30(1) 93-109 | ISSN: | 0350-8528 Zbornik radova, Elektrotehnički institut Nikola Tesla Search Idenfier |
Type: | Article | Collation: | vol. 30 br. 30 str. 93-109 | DOI: | 10.5937/zeint30-29318 | URI: | https://enauka.gov.rs/handle/123456789/581322 https://zenodo.org/record/6597734 |
M-category: | 53M53 |
Items in eNauka are protected by copyright, with all rights reserved, unless otherwise indicated.