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eNauka >  Results >  Effect of GaP strain compensation layers on rapid thermally annealed InGaAs/GaAs quantum dot infrared photodetectors grown by metal-organic chemical-vapor deposition
Title: Effect of GaP strain compensation layers on rapid thermally annealed InGaAs/GaAs quantum dot infrared photodetectors grown by metal-organic chemical-vapor deposition
Authors: Fu, L.; McKerracher, I.; Tan, H. H.; Jagadish, C.; Vukmirovic, N.  ; Harrison, P.
Issue Date: 2007
Publication: Applied Physics Letters
ISSN: 0003-6951 Applied Physics Letters Search Idenfier
Type: Article
Collation: vol. 91 br. 7
DOI: 10.1063/1.2770765
WoS-ID: 000248866600110
Scopus-ID: 2-s2.0-34548010528
URI: https://enauka.gov.rs/handle/123456789/772320
Metadata source: (Preuzeto iz ORCID-a) Vukmirovic, Nenad
M-category: 
21a+M21a+

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