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eNauka >  Results >  Effects of rapid thermal annealing on device characteristics of InGaAs/GaAs quantum dot infrared photodetectors
Title: Effects of rapid thermal annealing on device characteristics of InGaAs/GaAs quantum dot infrared photodetectors
Authors: Fu, L; Tan, HH; McKerracher, I; Wong-Leung, J; Jagadish, C; Vukmirovic, N  ; Harrison, P
Issue Date: 2006
Publication: Journal of Applied Physics
ISSN: 0021-8979 Journal of Applied Physics Search Idenfier
Type: Article
Collation: vol. 99 br. 11
DOI: 10.1063/1.2202704
WoS-ID: 000238314900114
Scopus-ID: 2-s2.0-33745256237
URI: https://enauka.gov.rs/handle/123456789/773608
Metadata source: (Preuzeto iz ORCID-a) Vukmirovic, Nenad
M-category: 
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