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Radiation and annealing related effects in NBT stressed P-channel power VDMOSFETs
| Title: | Radiation and annealing related effects in NBT stressed P-channel power VDMOSFETs | Authors: | Danković, Danijel |
Issue Date: | 2021 | Publication: | Microelectronics Reliability | ISSN: | 0026-2714 Microelectronics Reliability Search Idenfier |
Publisher: | United Kingdom : Elsevier {BV} | Type: | Article | Collation: | vol. 126 str. 114273-114273 | DOI: | 10.1016/j.microrel.2021.114273 | WoS-ID: | 000744193900010 | Scopus-ID: | 2-s2.0-85120893940 | URI: | https://enauka.gov.rs/handle/123456789/776667 | URL: | http://dx.doi.org/10.1016/j.microrel.2021.114273 | Project: | Ministry of Education, Science and Technological Development, Serbia [OI-171026, TR-32026] [F-148] |
Metadata source: | (Preuzeto iz ORCID-a) Mitrovic, Nikola | M-category: | 22M22 |
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