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eNauka >  Results >  Radiation and annealing related effects in NBT stressed P-channel power VDMOSFETs
Title: Radiation and annealing related effects in NBT stressed P-channel power VDMOSFETs
Authors: Danković, Danijel  ; Davidović, Vojkan  ; Golubović, Snežana ; Veljković, Sandra  ; Mitrović, Nikola  ; Đorić-Veljković, Snežana  
Issue Date: 2021
Publication: Microelectronics Reliability
ISSN: 0026-2714 Microelectronics Reliability Search Idenfier
Publisher: United Kingdom : Elsevier {BV}
Type: Article
Collation: vol. 126 str. 114273-114273
DOI: 10.1016/j.microrel.2021.114273
WoS-ID: 000744193900010
Scopus-ID: 2-s2.0-85120893940
URI: https://enauka.gov.rs/handle/123456789/776667
URL: http://dx.doi.org/10.1016/j.microrel.2021.114273
Project: Ministry of Education, Science and Technological Development, Serbia [OI-171026, TR-32026]
[F-148]
Metadata source: (Preuzeto iz ORCID-a) Mitrovic, Nikola
M-category: 
22M22

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