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eNauka >  Results >  Effects of burn-in stressing on post-irradiation annealing response of power VDMOSFETs
Title: Effects of burn-in stressing on post-irradiation annealing response of power VDMOSFETs
Authors: Đoric-Veljkovic, Snezana M  ; Đoric-Veljkovic, Snezana M; Davidovic, Vojkan S; Golubovic, Snezana M; Stojadinovic, Ninoslav D
Issue Date: 2003
Publication: Microelectronics Reliability
ISSN: 0026-2714 Microelectronics Reliability Search Idenfier
Publisher: United Kingdom : Elsevier BV
Type: Article
Collation: vol. 43 br. 9-11 str. 1455-1460
DOI: 10.1016/S0026-2714(03)00258-0
WoS-ID: 000185791500018
Scopus-ID: 2-s2.0-0041692616
URI: https://enauka.gov.rs/handle/123456789/808414
Metadata source: (Preuzeto iz Nasi u WoS)
M-category: 
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