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eNauka >  Results >  Defects induced by gamma-ray irradiation and post-irradiation annealing and its influence on the threshold voltage of p-channel power VDMOS transistors
Title: Defects induced by gamma-ray irradiation and post-irradiation annealing and its influence on the threshold voltage of p-channel power VDMOS transistors
Authors: Pejovic, Milic M  
Issue Date: 2019
Publication: RADIATION EFFECTS AND DEFECTS IN SOLIDS
ISSN: 1042-0150 Radiation Effects and Defects in Solids Search Idenfier
Type: Article
Collation: vol. 174 br. 7-8 str. 567-578
DOI: 10.1080/10420150.2019.1619735
WoS-ID: 000482575200001
Scopus-ID: 2-s2.0-85067037162
URI: https://enauka.gov.rs/handle/123456789/811645
Project: Ministry of Education Science and Technological Development of the Republic of Serbia [171007]
Metadata source: (Preuzeto iz Nasi u WoS)
M-category: 
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