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Defects induced by gamma-ray irradiation and post-irradiation annealing and its influence on the threshold voltage of p-channel power VDMOS transistors
| Naziv: | Defects induced by gamma-ray irradiation and post-irradiation annealing and its influence on the threshold voltage of p-channel power VDMOS transistors | Autori: | Pejovic, Milic M   |
Godina: | 2019 | Publikacija: | RADIATION EFFECTS AND DEFECTS IN SOLIDS | ISSN: | 1042-0150 Radiation Effects and Defects in Solids Pretraži identifikator |
Tip rezultata: | Naučni članak | Kolacija: | vol. 174 br. 7-8 str. 567-578 | DOI: | 10.1080/10420150.2019.1619735 | WoS-ID: | 000482575200001 | Scopus-ID: | 2-s2.0-85067037162 | URI: | https://enauka.gov.rs/handle/123456789/811645 | Projekat: | Ministry of Education Science and Technological Development of the Republic of Serbia [171007] | Izvor metapodataka: | (Preuzeto iz Nasi u WoS) | M-kategorija: | 23M23 - Međunarodni časopis kategorije M23 |
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