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Turn-Around of Threshold Voltage in Gate Bias Stressed p-Channel Power Vertical Double-Diffused Metal-Oxide-Semiconductor Transistors
| Title: | Turn-Around of Threshold Voltage in Gate Bias Stressed p-Channel Power Vertical Double-Diffused Metal-Oxide-Semiconductor Transistors | Authors: | Davidović, Vojkan   ; Stojadinović, Ninoslav ; Danković, Danijel ; Golubović, Snežana ; Manić, Ivica ; Đorić Veljković, Snežana ; Dimitrijev, Sima |
Issue Date: | 2008 | Publication: | Japanese journal of applied physics | ISSN: | 0021-4922 Japanese Journal of Applied Physics Search Idenfier |
Publisher: | United Kingdom : IOP Publishing | Type: | Article | Collation: | vol. 47 br. 8 str. 6272-6276 | DOI: | 10.1143/JJAP.47.6272 | WoS-ID: | 000260003000017 | Scopus-ID: | 2-s2.0-55149087510 | URI: | https://enauka.gov.rs/handle/123456789/814732 | Project: | Ministry of Science of the Republic of Serbia | Metadata source: | (Preuzeto iz Nasi u WoS) | M-category: | 22M22 |
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