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Analysis of postirradiation annealing of n-channel power vertical double-diffused metal-oxide-semiconductor transistors
| Naziv: | Analysis of postirradiation annealing of n-channel power vertical double-diffused metal-oxide-semiconductor transistors | Autori: | Ristic, Goran S   ; Pejovic, Momcilo M; Jaksic, Aleksandar B |
Godina: | 2000 | Publikacija: | JOURNAL OF APPLIED PHYSICS | ISSN: | 0021-8979 Journal of Applied Physics Pretraži identifikator |
Tip rezultata: | Naučni članak | Kolacija: | vol. 87 br. 7 str. 3468-3477 | DOI: | 10.1063/1.372368 | WoS-ID: | 000085878100046 | Scopus-ID: | 2-s2.0-0041466223 | URI: | https://enauka.gov.rs/handle/123456789/825483 | Izvor metapodataka: | (Preuzeto iz Nasi u WoS) | M-kategorija: | 21aM21a - Vodeći međunarodni časopis kategorije M21a |
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