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eNauka >  Results >  Electronic structure of ytterbium-implanted GaN at ambient and high pressure: Experimental and crystal field studies
Title: Electronic structure of ytterbium-implanted GaN at ambient and high pressure: Experimental and crystal field studies
Authors: Kaminska, A.; Ma, C.-G.; Brik, M.G.  ; Kozanecki, A.; Boćkowski, M.; Alves, E.; Suchocki, A.
Issue Date: 2012
Publication: Journal of Physics Condensed Matter
ISSN: 0953-8984 Journal of Physics: Condensed Matter Search Idenfier
Type: Article
Collation: vol. 24 br. 9 str. 095803-095803
DOI: 10.1088/0953-8984/24/9/095803
WoS-ID: 000300641000024
Scopus-ID: 2-s2.0-84857242858
URI: https://enauka.gov.rs/handle/123456789/849987
URL: http://www.scopus.com/inward/record.url?eid=2-s2.0-84857242858&partnerID=MN8TOARS
Metadata source: (Preuzeto iz ORCID-a) Brik, Mikhail
M-category: 
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