Electronic structure of InyGa1-xNx/GaAs multiple quantum wells in the dilute-N regime from pressure and k·p studies

Choulis, S.A.; Hosea, T.J.C.; Tomić, Stanko; Kamal-Saadi, M.; Adams, A.R.; O'Reilly, E.P.; Weinstein, B.A.; Klar, P.J.

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eNauka > Results > Electronic structure of InyGa1-xNx/GaAs multiple quantum wells in the dilute-N regime from pressure and k·p studies

Title:	Electronic structure of InyGa1-xNx/GaAs multiple quantum wells in the dilute-N regime from pressure and k·p studies
Authors:	Choulis, S.A.; Hosea, T.J.C.; Tomić, Stanko ; Kamal-Saadi, M.; Adams, A.R.; O'Reilly, E.P.; Weinstein, B.A.; Klar, P.J.
Issue Date:	2002
Publication:	Physical Review B - Condensed Matter and Materials Physics
ISSN:	0163-1829 Physical Review. Ser B: Condensed Matter Search Idenfier
Type:	Article
Collation:	vol. 66 br. 16 str. 1653211-1653219
Scopus-ID:	2-s2.0-0037110014
URI:	https://enauka.gov.rs/handle/123456789/852526
Metadata source:	(Preuzeto iz ORCID-a) Tomić, Stanko
M-category:	21aM21a

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