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eNauka >  Results >  Effects of positive gate bias stressing and subsequent recovery treatment in power VDMOSFETs
Title: Effects of positive gate bias stressing and subsequent recovery treatment in power VDMOSFETs
Authors: Stojadinovic, N.; Manic, I.; Đoric-Veljkovic, S.  ; Davidovic, V.; Golubovic, S.; Dimitrijev, S.
Issue Date: 2002
Publication: Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)
Publisher: Oranjestad, Netherlands : IEEE
Type: Conference Paper
ISBN: 0-7803-7380-4 Search Idenfier
Collation: str. D050-1-D050-8
DOI: 10.1109/ICCDCS.2002.1004073
Scopus-ID: 2-s2.0-84900315641
URI: https://enauka.gov.rs/handle/123456789/875779
Metadata source: (Preuzeto iz CrossRef-a) Đorić-Veljković, Snežana
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