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Charge-pumping characterization of SiO/sub 2//Si interface in virgin and irradiated power VDMOSFETs
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Title: | Charge-pumping characterization of SiO/sub 2//Si interface in virgin and irradiated power VDMOSFETs | Authors: | Habaš, Predrag ![]() ![]() ![]() ![]() ![]() ![]() |
Issue Date: | 1996 | Publication: | IEEE Transactions on Electron Devices | ISSN: | 0018-9383![]() ![]() |
Publisher: | Institute of Electrical and Electronics Engineers ({IEEE}) | Type: | Article | Collation: | vol. 43 br. 12 str. 2197-2209 | DOI: | 10.1109/16.544392 | WoS-ID: | A1996VU87900021 | Scopus-ID: | 2-s2.0-0030399292 | URI: | https://enauka.gov.rs/handle/123456789/878635 | Metadata source: | (Preuzeto iz ORCID-a) Pantić, Dragan | M-category: | Mp. category will be shown later |
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