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eNauka >  Results >  Numerical simulation of creation-passivation kinetics of interface traps in irradiated n-channel power VDMOSFETs during thermal annealing with various gate biases
Title: Numerical simulation of creation-passivation kinetics of interface traps in irradiated n-channel power VDMOSFETs during thermal annealing with various gate biases
Authors: Ristić, Goran  ; Pejović, Momčilo ; Jakšić, Aleksandar
Issue Date: 1998
Publication: Microelectronic Engineering
ISSN: 0167-9317 Microelectronic Engineering Search Idenfier
Type: Article
Collation: vol. 40 br. 2 str. 51-60
DOI: 10.1016/s0167-9317(97)00193-7
WoS-ID: 000075115300001
Scopus-ID: 2-s2.0-0032115057
URI: https://enauka.gov.rs/handle/123456789/881627
Metadata source: (Preuzeto iz ORCID-a) Ristić, Goran
M-category: 
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