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The behaviour of radiation-induced gate-oxide defects in MOSFETs during annealing at 140°C
| Title: | The behaviour of radiation-induced gate-oxide defects in MOSFETs during annealing at 140°C | Authors: | Pejović, Momčilo  ; Jakšić, Aleksandar; Ristić, Goran |
Issue Date: | 1998 | Publication: | Journal of Non-Crystalline Solids | ISSN: | 0022-3093 Journal of Non-crystalline Solids Search Idenfier |
Type: | Article | Collation: | vol. 240 br. 1-3 str. 182-192 | DOI: | 10.1016/S0022-3093(98)00718-2 | WoS-ID: | 000076724000019 | Scopus-ID: | 2-s2.0-0032475606 | URI: | https://enauka.gov.rs/handle/123456789/881630 | Metadata source: | (Preuzeto iz ORCID-a) Ristić, Goran | M-category: | 21aM21a |
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