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eNauka >  Rezultati >  Characterization of Growth and Real Structure of Nitride Based Semiconductor Devices by Use of Synchrotron Radiation
Naziv: Characterization of Growth and Real Structure of Nitride Based Semiconductor Devices by Use of Synchrotron Radiation
Autori: Miljević, Bojan  
Mentor: Gerd Tilo Baumbach
Godina: 2012
Izdavač: Karlsruher: Karlsruher Institut für Technologie (KIT)
Tip rezultata: Doktorska disertacija
Kolacija: str. 1-163
DOI: 10.5445/IR/1000030281
URI: https://enauka.gov.rs/handle/123456789/891558
Izvor metapodataka: (Preuzeto iz ORCID-a) Miljević, Bojan
M-kategorija: 
70M70 - Odbranjena doktorska disertacija

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