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eNauka >  Results >  Influence of the in-situ deposited SiNX interlayer on the crystalline quality of MOVPE grown thin GaN films
Title: Influence of the in-situ deposited SiNX interlayer on the crystalline quality of MOVPE grown thin GaN films
Authors: Miljević, Bojan  ; Barchuk, Mykhailo; Krause, Baerbel; Holy, Vaclav; Baumbach, Tilo; Scholz, Ferdinand; Hertkorn, Joachim; Darma, M.S.D.
Issue Date: 2009
Publication: 13th European Workshop on Metalorganic Vapour Phase Epitaxy EWMOVPE 2009, Ulm 7th – 10th June 2009
Publisher: Ulm: Institute of Optoelectronics, Ulm University
Type: Conference Paper
Collation: str. 213-216
URI: https://enauka.gov.rs/handle/123456789/893556
Metadata source: (Preuzeto iz KNR-a) Miljević, Bojan
Availability note: Подаци и/или пуни текст су непотпуни
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