Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition

V. Djara; M. Sousa; N. Đorđević; L. Czornomaz; V. Deshpande; C. Marchiori; E. Uccelli; C. Rossel; J. Fompeyrine

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eNauka > Results > Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition

Title:	Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
Authors:	V. Djara; M. Sousa; N. Đorđević; L. Czornomaz; V. Deshpande; C. Marchiori; E. Uccelli; C. Rossel; J. Fompeyrine
Issue Date:	2015
Publication:	MICROELECTRONIC ENGINEERING
ISSN:	0167-9317 Microelectronic Engineering Search Idenfier
Type:	Article
Collation:	vol. 147 br. 1 str. 231-234
URI:	http://ezaposleni.singidunum.ac.rs/rest/sciNaucniRezultati/oai/record/2/10849 https://enauka.gov.rs/handle/123456789/952473
M-category:	22M22

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