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eNauka >  Results >  The effects of NBT stressing on later operation of power VDMOS transistors under normal conditions
Title: The effects of NBT stressing on later operation of power VDMOS transistors under normal conditions
Authors: Veljkovic, Sandra  ; Mitrović, Nikola  ; Davidović, Vojkan  ; Albena Paskaleva; Dencho Spassov; Jovanović, Igor  ; Živanović, Emilija  ; Ristić, Goran  ; Danković, Danijel  
Issue Date: 2024
Publication: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2024), Parma, Italy, 23-26 September 2024, pp. 1-4
Type: Conference Paper
URI: https://enauka.gov.rs/handle/123456789/958776
Metadata source: (Preuzeto iz ORCID-a) Veljković, Sandra
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