The effects of NBT stressing on later operation of power VDMOS transistors under normal conditions

Veljkovic, Sandra; Mitrović, Nikola; Davidović, Vojkan; Albena Paskaleva; Dencho Spassov; Jovanović, Igor; Živanović, Emilija; Ristić, Goran; Danković, Danijel

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eNauka > Rezultati > The effects of NBT stressing on later operation of power VDMOS transistors under normal conditions

Title:	The effects of NBT stressing on later operation of power VDMOS transistors under normal conditions
Authors:	Veljkovic, Sandra ; Mitrović, Nikola ; Davidović, Vojkan ; Albena Paskaleva; Dencho Spassov; Jovanović, Igor ; Živanović, Emilija ; Ristić, Goran ; Danković, Danijel
Issue Date:	2024
Publication:	European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2024), Parma, Italy, 23-26 September 2024, pp. 1-4
Type:	Conference Paper
URI:	https://enauka.gov.rs/handle/123456789/958776
Metadata source:	(Preuzeto iz ORCID-a) Veljković, Sandra
M-category:	Mp. category will be shown later

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