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Successive irradiation and bias temperature stress induced effects on commercial p-channel power VDMOS transistors
| Title: | Successive irradiation and bias temperature stress induced effects on commercial p-channel power VDMOS transistors | Authors: | Veljković, Sandra |
Issue Date: | 2024 | Publication: | Facta universitatis - series: Electronics and Energetics | ISSN: | 0353-3670 Facta Universitatis: Series Electronics and Energetics Search Idenfier |
Type: | Article | Collation: | vol. 37 br. 4 str. 561-579 | DOI: | 10.2298/fuee2404561v | WoS-ID: | 001382894500002 | Scopus-ID: | 2-s2.0-85213414457 | URI: | https://enauka.gov.rs/handle/123456789/971124 | URL: | http://dx.doi.org/10.2298/fuee2404561v | Project: | Ministry of Science, Technological Development and Innovations of the Republic of Serbia [451-03-65/2024-03/200102] | Metadata source: | (Preuzeto iz ORCID-a) Veljković, Sandra | M-category: | 23M23 |
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