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Modelling of kinetics of creation and passivation of interface traps in metal-oxide-semiconductor transistors during postirradiation annealing
| Title: | Modelling of kinetics of creation and passivation of interface traps in metal-oxide-semiconductor transistors during postirradiation annealing | Authors: | Ristić, Goran   ; Pejović, Momčilo ; Jakšić, Aleksandar |
Issue Date: | 1998 | Publication: | Journal of Applied Physics | ISSN: | 1089-7550 Journal of Applied Physics Search Idenfier |
Type: | Article | Collation: | vol. 83 br. 6 str. 2994-3000 | DOI: | 10.1063/1.367055 | WoS-ID: | 000072640700018 | Scopus-ID: | 2-s2.0-0032027260 | URI: | https://enauka.gov.rs/handle/123456789/881628 | Metadata source: | (Preuzeto iz ORCID-a) Ristić, Goran | M-category: | 21M21 |
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