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eNauka >  Results >  Modelling of kinetics of creation and passivation of interface traps in metal-oxide-semiconductor transistors during postirradiation annealing
Title: Modelling of kinetics of creation and passivation of interface traps in metal-oxide-semiconductor transistors during postirradiation annealing
Authors: Ristić, Goran  ; Pejović, Momčilo ; Jakšić, Aleksandar
Issue Date: 1998
Publication: Journal of Applied Physics
ISSN: 1089-7550 Journal of Applied Physics Search Idenfier
Type: Article
Collation: vol. 83 br. 6 str. 2994-3000
DOI: 10.1063/1.367055
WoS-ID: 000072640700018
Scopus-ID: 2-s2.0-0032027260
URI: https://enauka.gov.rs/handle/123456789/881628
Metadata source: (Preuzeto iz ORCID-a) Ristić, Goran
M-category: 
21aM21a

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