Researchers

Results 21-40 of 59
Issue DateTitleAuthor(s)TypeМp-cat.
2012Influence of Ionizing Radiation and Hot Carrier Injection on Metal-Oxide-Semiconductor Transistors, Chapter in monoraphy Current Topics in Ionizing, Radiation Research, edited by M. NenoiPejović, Momčilo ; Osmokrović, Predrag ; Pejović, Milić  ; Stanković, Koviljka  Book parts
Mp. category will be shown later
2011Gamma-Ray Irradiation and Post-Irradiation At Room and Elevated Temperature Response of Pmos Dosimeters with Thick Gate OxidesPejovic, Momcilo M. ; Pejović, Svetlana M.; Dolicanin, Edin C.  ; Lazarević, Đorđe R.  Article
22M22
2011Radiation-sensitive field effect transistor response to gamma-ray irradiationPejović, Milić  ; Pejović, Momčilo ; Jaksic, AleksandarArticle
22M22
2011Experimental investigation of breakdown voltage and electrical breakdown time delay of commercial gas discharge tubesPejović, Milić  ; Pejović, Momčilo ; Stanković, Koviljka  Article
22M22
2011The evolution of time delay of electrical breakdown measurement systemPejović, Milić  ; Pejović, Momčilo ; Nešić Nikola ; Bogdanović N.; Bajramović Z.Conference Paper
Mp. category will be shown later
2011The influence of additional electrons on memory effect in nitrogen at low pressuresNesic, Nikola T; Pejović, Momčilo ; Pejović, Milić  ; Živanović, Emilija  Article
21M21
2011Analysis of statistical nature of electrical breakdown time delay in nitrogen at 6.6 mbar pressure in presence of positive ions and N(4S) atomsŽivanović, Emilija  ; Pejović, Momčilo ; Pejović, Milić  Article
22M22
2010RadiotherapyPejović, Milić M.  ; Pejović, Momčilo M. Book parts
Mp. category will be shown later
2010Microcontroller based system for electrical breakdown time delay measurement in gas-filled devicesPejović, Milić  ; Denić, Dragan  ; Pejović, Momčilo ; Nešić, Nikola T. ; Vasović, Nikola Article
21M21
2010Analysis of processes responsible for the memory effect in air at low pressuresPejović, Momčilo ; Živanović, Emilija  ; Pejović, Milić  ; Karamarković, Jugoslav  Article
21M21
2010Effect of fluorination and hydrogenation by ion implantation on reliability of poly-Si TFTs under gamma irradiationJelenković, Emil V; Ristić, Goran  ; Pejović, Milić  ; Jevtić, Milan M; Jha, Shrawan K; Videnović-Mišić, Mirjana ; Pejović, Momčilo ; Tong, K YArticle
21M21
2000Post-irradiation behavior of commercial power VDMOSFETsJakšić, Aleksandar; Pejović, Momčilo ; Ristić, Goran  Conference Paper
Mp. category will be shown later
1999Influence of light from nitrogen-filled lamps on the time delay of electrical breakdown in nitrogen-filled tubesPejović, Momčilo ; Ristić, Goran  ; Petrović, Zoran Article
22M22
1998Modelling of kinetics of creation and passivation of interface traps in metal-oxide-semiconductor transistors during postirradiation annealingRistić, Goran  ; Pejović, Momčilo ; Jakšić, AleksandarArticle
21aM21a
1998The behaviour of radiation-induced gate-oxide defects in MOSFETs during annealing at 140°CPejović, Momčilo ; Jakšić, Aleksandar; Ristić, Goran  Article
21aM21a
1998Latent interface-trap generation in commercial power VDMOSFETsJakšić, Aleksandar; Pejović, Momčilo ; Ristić, Goran  ; Raković, S.Conference Paper
Mp. category will be shown later
1998Numerical simulation of creation-passivation kinetics of interface traps in irradiated n-channel power VDMOSFETs during thermal annealing with various gate biasesRistić, Goran  ; Pejović, Momčilo ; Jakšić, AleksandarArticle
21M21
1997Creation and passivation of interface traps in irradiated MOS transistors during annealing at different temperaturesPejović, Momčilo ; Ristić, Goran  Article
22M22
1997Processes in n-channel MOSFETS during postirradiation thermal annealingPejović, Momčilo ; Jakšić, Aleksandar; Ristić, Goran  ; Baljošević, B.Article
21M21
1997Formation and passivation of interface traps in irradiated n-channel power VDMOSFETs during thermal annealingPejović, Momčilo ; Ristić, Goran  ; Jakšić, AleksandarArticle
22M22