| Issue Date | Title | Author(s) | Type | Мp-cat. |
| 2012 | Influence of Ionizing Radiation and Hot Carrier Injection on Metal-Oxide-Semiconductor Transistors, Chapter in monoraphy Current Topics in Ionizing, Radiation Research, edited by M. Nenoi | Pejović, Momčilo ; Osmokrović, Predrag ; Pejović, Milić ; Stanković, Koviljka  | Book parts | |
| 2011 | Gamma-Ray Irradiation and Post-Irradiation At Room and Elevated Temperature Response of Pmos Dosimeters with Thick Gate Oxides | Pejovic, Momcilo M. ; Pejović, Svetlana M.; Dolicanin, Edin C. ; Lazarević, Đorđe R.  | Article | |
| 2011 | Radiation-sensitive field effect transistor response to gamma-ray irradiation | Pejović, Milić ; Pejović, Momčilo ; Jaksic, Aleksandar | Article | |
| 2011 | Experimental investigation of breakdown voltage and electrical breakdown time delay of commercial gas discharge tubes | Pejović, Milić ; Pejović, Momčilo ; Stanković, Koviljka  | Article | |
| 2011 | The evolution of time delay of electrical breakdown measurement system | Pejović, Milić ; Pejović, Momčilo ; Nešić Nikola ; Bogdanović N.; Bajramović Z. | Conference Paper | |
| 2011 | The influence of additional electrons on memory effect in nitrogen at low pressures | Nesic, Nikola T; Pejović, Momčilo ; Pejović, Milić ; Živanović, Emilija  | Article | |
| 2011 | Analysis of statistical nature of electrical breakdown time delay in nitrogen at 6.6 mbar pressure in presence of positive ions and N(4S) atoms | Živanović, Emilija ; Pejović, Momčilo ; Pejović, Milić  | Article | |
| 2010 | Radiotherapy | Pejović, Milić M. ; Pejović, Momčilo M.  | Book parts | |
| 2010 | Microcontroller based system for electrical breakdown time delay measurement in gas-filled devices | Pejović, Milić ; Denić, Dragan ; Pejović, Momčilo ; Nešić, Nikola T. ; Vasović, Nikola  | Article | |
| 2010 | Analysis of processes responsible for the memory effect in air at low pressures | Pejović, Momčilo ; Živanović, Emilija ; Pejović, Milić ; Karamarković, Jugoslav  | Article | |
| 2010 | Effect of fluorination and hydrogenation by ion implantation on reliability of poly-Si TFTs under gamma irradiation | Jelenković, Emil V; Ristić, Goran ; Pejović, Milić ; Jevtić, Milan M; Jha, Shrawan K; Videnović-Mišić, Mirjana ; Pejović, Momčilo ; Tong, K Y | Article | |
| 2000 | Post-irradiation behavior of commercial power VDMOSFETs | Jakšić, Aleksandar; Pejović, Momčilo ; Ristić, Goran  | Conference Paper | |
| 1999 | Influence of light from nitrogen-filled lamps on the time delay of electrical breakdown in nitrogen-filled tubes | Pejović, Momčilo ; Ristić, Goran ; Petrović, Zoran  | Article | |
| 1998 | Modelling of kinetics of creation and passivation of interface traps in metal-oxide-semiconductor transistors during postirradiation annealing | Ristić, Goran ; Pejović, Momčilo ; Jakšić, Aleksandar | Article | |
| 1998 | The behaviour of radiation-induced gate-oxide defects in MOSFETs during annealing at 140°C | Pejović, Momčilo ; Jakšić, Aleksandar; Ristić, Goran  | Article | |
| 1998 | Latent interface-trap generation in commercial power VDMOSFETs | Jakšić, Aleksandar; Pejović, Momčilo ; Ristić, Goran ; Raković, S. | Conference Paper | |
| 1998 | Numerical simulation of creation-passivation kinetics of interface traps in irradiated n-channel power VDMOSFETs during thermal annealing with various gate biases | Ristić, Goran ; Pejović, Momčilo ; Jakšić, Aleksandar | Article | |
| 1997 | Creation and passivation of interface traps in irradiated MOS transistors during annealing at different temperatures | Pejović, Momčilo ; Ristić, Goran  | Article | |
| 1997 | Processes in n-channel MOSFETS during postirradiation thermal annealing | Pejović, Momčilo ; Jakšić, Aleksandar; Ristić, Goran ; Baljošević, B. | Article | |
| 1997 | Formation and passivation of interface traps in irradiated n-channel power VDMOSFETs during thermal annealing | Pejović, Momčilo ; Ristić, Goran ; Jakšić, Aleksandar | Article | |