Researchers
Pejović, Momčilo
Date issued
Results 41-59 of 59
| Issue Date | Title | Author(s) | Type | Мp-cat. |
|---|---|---|---|---|
| 1997 | Processes in n-channel MOSFETS during postirradiation thermal annealing | Pejović, Momčilo  ; Jakšić, Aleksandar; Ristić, Goran  ; Baljošević, B. | Article | 21M21 |
| 1997 | pMOS dosimetric transistors with two-layer gate oxide | Ristić, Goran ; Jakšić, Aleksandar; Pejović, Momčilo | Article | 21M21 |
| 1996 | Analysis of the processes in power MOSFETs during γ-ray irradiation and subsequent thermal annealing | Jakšić, Aleksandar; Ristić, Goran ; Pejović, Momčilo | Article | Mp. category will be shown later |
| 1996 | Determination of formative time of electrical breakdown in nitrogen-filled tube | Pejović, Momčilo ; Marković, Vidosav ; Ristić, Goran ; Mekić, S. | Article | Mp. category will be shown later |
| 1995 | Temperature-induced rebound in Al-gate NMOS transistors | Pejović, Momčilo ; Golubović, Snežana ; Ristić, Goran | Article | Mp. category will be shown later |
| 1995 | Formative Time Determination in Nitrogen-Filled Tube Using Statistical Methods | Pejović, Momčilo ; Živković, Jasmina; Milosavljević, Čedomir ; Ristić, Goran | Article | Mp. category will be shown later |
| 1995 | Sensitivity and fading of pMOS dosimeters with thick gate oxide | Ristić, Goran ; Golubović, Snežana ; Pejović, Momčilo | Article | Mp. category will be shown later |
| 1995 | Latent interface-trap generation during thermal annealing of γ-ray irradiated power VDMOSFETs | Jakšić, Aleksandar; Ristić, Goran ; Pejovic, Momčilo | Conference Paper | Mp. category will be shown later |
| 1995 | Effects of γ-irradiation and postirradiation thermal annealing in power VDMOSFETs | Jakšić, Aleksandar; Ristić, Goran ; Pejović, Momčilo | Conference Paper | Mp. category will be shown later |
| 1995 | P-channel metal-oxide-semiconductor dosimeter fading dependencies on gate bias and oxide thickness | Ristić, Goran ; Golubović, Snežana ; Pejović, Momčilo | Article | Mp. category will be shown later |
| 1995 | Rebound effect in power VDMOSFETs due to latent interface-trap generation | Jakšić, Aleksandar; Ristić, Goran ; Pejović, Momčilo | Article | Mp. category will be shown later |
| 1995 | Effect of radiation-induced oxide-trapped charge on mobility in p-channel MOSFETs | Stojadinović, Ninoslav ; Pejović, Momčilo ; Golubović, Snežana ; Ristić, Goran ; Davidović, Vojkan ; Dimitrijev, Sima | Article | Mp. category will be shown later |
| 1994 | The role of interface traps in rebound mechanisms | Golubović, Snežana ; Ristić, Goran ; Pejović, Momčilo ; Dimitrijev, Sima | Article | 23M23 |
| 1994 | Temperature and gate bias effects on gamma-irradiated Al-gate metal-oxide-semiconductor transistors | Pejović, Momčilo ; Golubović, Snežana ; Ristić, Goran ; Odalović, Milan | Article | 21M21 |
| 1994 | pMOS dosimeter with two-layer gate oxide operated at zero and negative bias | Ristić, Goran ; Golubović, Snežana ; Pejović, Momčilo | Article | 21M21 |
| 1994 | Annealing of gamma-irradiated Al-gate NMOS transistors | Pejović, Momčilo ; Golubović, Snežana ; Ristić, Goran ; Odalović, Milan | Article | 21M21 |
| 1993 | pMOS transistors for dosimetric application | Ristić, Goran ; Golubović, Snežana ; Pejović, Momčilo | Article | 21M21 |
| 1993 | A comparison between thermal annealing and UV‐radiation annealing of γ‐irradiated NMOS transistors | Pejović, Momčilo ; Ristić, Goran ; Golubović, Snežana | Article | 23M23 |
| 1992 | Opšti kurs fizike - zbirka rešenih zadataka | Pejović, Momčilo M. ; Župac, Dragan; Golubović, Snežana ; Jovanović, Tatjana ; Ristić, Goran S. | Encyclopedia entries | Mp. category will be shown later |