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Browsing by Author Jakšić, Aleksandar

Showing results 21 to 38 of 38 < previous 
Issue DateTitleAuthor(s)TypeМ-cat.
2020Institucije naslednog pravaĐurđević, Dejan B.Monograph
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1995Latent interface-trap generation during thermal annealing of γ-ray irradiated power VDMOSFETs (✓)Jakšić, Aleksandar; Ristić, Goran  ; Pejovic, Momčilo Conference Paper
Mp. category will be shown later
1998Latent interface-trap generation in commercial power VDMOSFETs (✓)Jakšić, Aleksandar; Pejović, Momčilo ; Ristić, Goran  ; Raković, S.Conference Paper
Mp. category will be shown later
2016Međunarodno građansko procesno pravoJakšić, AleksandarMonograph
Mp. category will be shown later
2017Međunarodno privatno pravo : opšta teorijaJakšić, AleksandarText book
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2019Множина субјеката у парничном поступку са елементом иностраностиBabović, Branka  Doctoral theses
70M70
1998Modelling of kinetics of creation and passivation of interface traps in metal-oxide-semiconductor transistors during postirradiation annealing (✓)Ristić, Goran  ; Pejović, Momčilo ; Jakšić, AleksandarArticle
21M21
2008NATO intervention in the Former Yugoslavia : individual damage compensation claims : jurisdiction and applicable lawJakšić, AleksandarMonograph
Mp. category will be shown later
1998Numerical simulation of creation-passivation kinetics of interface traps in irradiated n-channel power VDMOSFETs during thermal annealing with various gate biases (✓)Ristić, Goran  ; Pejović, Momčilo ; Jakšić, AleksandarArticle
21M21
2019One numerical method for determining the absorbed dose of gamma and X radiation in the ZrO2 dielectric within the MOS capacitor (✓)Stanković, Srboljub J.  ; Jakšić, Aleksandar; Lončar, Boris; Nikolić, Dragana J.  ; Radenković, Mirjana  Conference Paper
Mp. category will be shown later
1997pMOS dosimetric transistors with two-layer gate oxide (✓)Ristić, Goran  ; Jakšić, Aleksandar; Pejović, Momčilo Article
22M22
2000Post-irradiation behavior of commercial power VDMOSFETs (✓)Jakšić, Aleksandar; Pejović, Momčilo ; Ristić, Goran  Conference Paper
Mp. category will be shown later
1997Processes in n-channel MOSFETS during postirradiation thermal annealing (✓)Pejović, Momčilo ; Jakšić, Aleksandar; Ristić, Goran  ; Baljošević, B.Article
22M22
2017Razlika između odziva RADFET u statičkom i dinamičkom on-line mernom sistemu prilikom izlaganja gama zračenju Co60 (✓)Stanković, Srboljub J.  ; Jakšić, Aleksandar; Vasović, Nikola; Lončar, Boris B.; Kržanović, Nikola  ; Živanović, Miloš Z.  Conference Paper
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1995Rebound effect in power VDMOSFETs due to latent interface-trap generation (✓)Jakšić, Aleksandar; Ristić, Goran  ; Pejović, Momčilo Article
Mp. category will be shown later
2016Sensitivity of standard and stacked RADFET dosimeters (✓)Jakšić, Aleksandar; Vasović, Nikola; Stanković, Srboljub  Conference Paper
Mp. category will be shown later
1998The behaviour of radiation-induced gate-oxide defects in MOSFETs during annealing at 140°C (✓)Pejović, Momčilo ; Jakšić, Aleksandar; Ristić, Goran  Article
21M21
2023Towards a Smart Multi-Sensor Ionizing Radiation Monitoring System (✓)Andjelković, Marko ; Chen, Junchao; Syed, Rizwan Tariq; Vargas, Fabian; Ulbricht, Markus; Krstić, Miloš  ; Ilić, Stefan; Marjanović, Miloš  ; Veljković, Sandra  ; Mitrović, Nikola  ;
Danković, Danijel  ; Ristić, Goran  ; Duane, Russell; Vasović, Nikola; Jakšić, Aleksandar; Palma, Alberto J.; Lallena, Antonio M.; Carvajal, Miguel A.;
Conference Paper
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