Ristić, Goran

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Results 141-160 of 160 Results/Page

Issue Date	Title	Author(s)	Type	Мp-cat.
1997	Efficiency of copper and gold cathode in initiation of secondary emission in nitrogen-filled tube	Pejović, Momčilo ; Marković, Vidosav ; Ristić, Goran ; Mekić, S.	Article	22M22
1997	Formation and passivation of interface traps in irradiated n-channel power VDMOSFETs during thermal annealing	Pejović, Momčilo ; Ristić, Goran ; Jakšić, Aleksandar	Article	22M22
1997	Creation and passivation of interface traps in irradiated MOS transistors during annealing at different temperatures	Pejović, Momčilo ; Ristić, Goran	Article	22M22
1996	Analysis of the processes in power MOSFETs during γ-ray irradiation and subsequent thermal annealing	Jakšić, Aleksandar; Ristić, Goran ; Pejović, Momčilo	Article	Mp. category will be shown later
1996	Determination of formative time of electrical breakdown in nitrogen-filled tube	Pejović, Momčilo ; Marković, Vidosav ; Ristić, Goran ; Mekić, S.	Article	Mp. category will be shown later
1995	Rebound effect in power VDMOSFETs due to latent interface-trap generation	Jakšić, Aleksandar; Ristić, Goran ; Pejović, Momčilo	Article	Mp. category will be shown later
1995	Effect of radiation-induced oxide-trapped charge on mobility in p-channel MOSFETs	Stojadinović, Ninoslav ; Pejović, Momčilo ; Golubović, Snežana ; Ristić, Goran ; Davidović, Vojkan ; Dimitrijev, Sima	Article	Mp. category will be shown later
1995	P-channel metal-oxide-semiconductor dosimeter fading dependencies on gate bias and oxide thickness	Ristić, Goran ; Golubović, Snežana ; Pejović, Momčilo	Article	Mp. category will be shown later
1995	Formative Time Determination in Nitrogen-Filled Tube Using Statistical Methods	Pejović, Momčilo ; Živković, Jasmina; Milosavljević, Čedomir ; Ristić, Goran	Article	Mp. category will be shown later
1995	Sensitivity and fading of pMOS dosimeters with thick gate oxide	Ristić, Goran ; Golubović, Snežana ; Pejović, Momčilo	Article	Mp. category will be shown later
1995	Latent interface-trap generation during thermal annealing of γ-ray irradiated power VDMOSFETs	Jakšić, Aleksandar; Ristić, Goran ; Pejovic, Momčilo	Conference Paper	Mp. category will be shown later
1995	Temperature-induced rebound in Al-gate NMOS transistors	Pejović, Momčilo ; Golubović, Snežana ; Ristić, Goran	Article	Mp. category will be shown later
1995	Effects of γ-irradiation and postirradiation thermal annealing in power VDMOSFETs	Jakšić, Aleksandar; Ristić, Goran ; Pejović, Momčilo	Conference Paper	Mp. category will be shown later
1994	Temperature and gate bias effects on gamma-irradiated Al-gate metal-oxide-semiconductor transistors	Pejović, Momčilo ; Golubović, Snežana ; Ristić, Goran ; Odalović, Milan	Article	21M21
1994	The role of interface traps in rebound mechanisms	Golubović, Snežana ; Ristić, Goran ; Pejović, Momčilo ; Dimitrijev, Sima	Article	23M23
1994	pMOS dosimeter with two-layer gate oxide operated at zero and negative bias	Ristić, Goran ; Golubović, Snežana ; Pejović, Momčilo	Article	21M21
1994	Annealing of gamma-irradiated Al-gate NMOS transistors	Pejović, Momčilo ; Golubović, Snežana ; Ristić, Goran ; Odalović, Milan	Article	21M21
1993	A comparison between thermal annealing and UV‐radiation annealing of γ‐irradiated NMOS transistors	Pejović, Momčilo ; Ristić, Goran ; Golubović, Snežana	Article	23M23
1993	pMOS transistors for dosimetric application	Ristić, Goran ; Golubović, Snežana ; Pejović, Momčilo	Article	21M21
1992	Opšti kurs fizike - zbirka rešenih zadataka	Pejović, Momčilo M. ; Župac, Dragan; Golubović, Snežana ; Jovanović, Tatjana ; Ristić, Goran S.	Encyclopedia entries	Mp. category will be shown later