| Issue Date | Title | Author(s) | Type | Мp-cat. |
| 2000 | Analysis of postirradiation annealing of n-channel power vertical double-diffused metal-oxide-semiconductor transistors | Ristic, Goran S   ; Pejovic, Momcilo M; Jaksic, Aleksandar B | Article | |
| 2003 | Comparison between post-irradiation annealing and post-high electric field stress annealing of n-channel power VDMOSFETs | Ristic, Goran S ; Pejovic, Momcilo M; Jaksic, Aleksandar B | Article | |
| 2006 | Defect behaviors in n-channel power VDMOSFETs during HEFS and thermal post-HEFS annealing | Ristic, Goran S ; Pejovic, Momcilo M; Jaksic, Aleksandar B | Article | |
| 2022 | Fading of pMOS dosimeters over a long period of time | Ristic, Goran S ; Andjelkovic, Marko S; Duane, Russell; Jaksic, Aleksandar B | Contribution to periodical | |
| 2005 | Fowler-Nordheim high electric field stress of power VDMOSFETs | Ristic, Goran S ; Pejovic, Momcilo M; Jaksic, Aleksandar B | Article | |
| 2002 | Gamma-ray irradiation and post-irradiation responses of high dose range RADFETs | Jaksic, Aleksandar B; Ristic, Goran S ; Pejovic, Momcilo M; Mohammadzadeh, A; Sudre, C; Lane, W | Article | |
| 2000 | Isothermal and isochronal annealing experiments on irradiated commercial power VDMOSFETs | Jaksic, Aleksandar B; Pejovic, Momcilo M; Ristic, Goran S | Article | |
| 2000 | New experimental evidence of latent interface-trap buildup in power VDMOSFETs | Jaksic, Aleksandar B; Ristic, Goran S ; Pejovic, Momcilo M | Article | |
| 2007 | Physico-chemical processes in metal-oxide-semiconductor transistors with thick gate oxide during high electric field stress | Ristic, Goran S ; Pejovic, Momcilo M; Jaksic, Aleksandar B | Article | |
| 2000 | Properties of latent interface-trap buildup in irradiated metal-oxide-semiconductor transistors determined by switched bias isothermal annealing experiments | Jaksic, Aleksandar B; Pejovic, Momcilo M; Ristic, Goran S | Article | |
| 2021 | Radiation and Spontaneous Annealing of Radiation-sensitive Field-effect Transistors with Gate Oxide Thicknesses of 400 and 1000 nm | Ristic, Goran S ; Andjelkovic, Marko S; Duane, Russell; Palma, Alberto J; Jaksic, Aleksandar B | Article | |
| 2008 | Repeating of positive and negative high electric field stress and corresponding thermal post-stress annealing of the n-channel power VDMOSFETs | Aleksic, Sanja M ; Jaksic, Aleksandar B; Pejovic, Momcilo M | Article | |