

Issue Date | Title | Author(s) | Type | Мp-cat. |
---|---|---|---|---|
2024 | The role of OLED devices in the development of smart cities![]() | Đorić Veljković, Snežana ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() | Article | 24M24 |
2023 | Effects in Commercial p-Channel Power VDMOS Transistors Initiated by Negative Bias Temperature Stress and Irradiation![]() | Veljković, Sandra ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() | Conference Paper | Mp. category will be shown later |
2022 | Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress![]() | Veljković, Sandra ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() | Article | 22M22 |
2022 | P-channel power VDMOSFETs under the influence of radiation and static/pulsed NBT stress![]() | Veljković, Sandra ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() | Conference Paper | Mp. category will be shown later |
2021 | Gate oxide degradation of electronic components due to irradiation and bias temperature stress![]() | Veljković, Sandra ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() | Conference Paper | Mp. category will be shown later |
2021 | Effects of Bias Temperature Stress and Irradiation in Commercial p-Channel Power VDMOS Transistors![]() | Veljković, Sandra ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() | Conference Paper | Mp. category will be shown later |
2018 | A review of pulsed NBTI in P-channel power VDMOSFETs![]() | Danković, Danijel ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() | Reviews | 22M22 |
2018 | NBT stress and radiation related degradation and underlying mechanisms in power VDMOSFETs![]() | Davidović, Vojkan ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() | Naučni članak | 24M24 - Vodeći nacionalni časopis kategorije M24 |
2018 | Elektrohemijski procesi kod p-kanalnih VDMOS tranzistora snage pri sukcesivnom NBT naprezanju i ozračivanju![]() | Davidović, Vojkan S. ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() | Konferencijski rad | Mp kategorija će biti prikazana naknadno. |
2018 | NBTI and irradiation related degradation mechanisms in power VDMOS transistors![]() | Stojadinović, Ninoslav ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() | Article | 22M22 |
2018 | Effects of consecutive irradiation and bias temperature stress in p-channel power vertical double-diffused metal oxide semiconductor transistors![]() | Davidović, Vojkan ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() | Article | 22M22 |
2017 | Ispitivanje višeslojnih HfO2/Al2O3 struktura za memorijske komponente![]() | Davidović, Vojkan S. ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() | Conference Paper | Mp. category will be shown later |
2017 | Electrical and Charge Trapping Properties of HfO2/Al2O3 Multilayer Dielectric Stacks![]() | Davidović, Vojkan S. ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() | Conference Paper | Mp. category will be shown later |
2017 | Modelling of Threshold Voltage Shift in Pulsed NBT Stressed P-Channel Power VDMOSFETs![]() | Danković, Danijel M. ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() | Conference Paper | Mp. category will be shown later |
2016 | On the Recoverable and Permanent Components of NBTI in p-Channel Power VDMOSFETs | Danković, Danijel ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() | Article | 21M21 |
2016 | NBTI and Irradiation Effects in P-Channel Power VDMOS Transistors![]() | Davidović, Vojkan ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() | Article | 21M21 |
2016 | Effects of pulsed negative bias temperature stressing in p-channel power VDMOSFETs![]() | Manić, Ivica ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() | Article | 24M24 |
2015 | Negative bias temperature instability in p-channel power VDMOSFETs: recoverable versus permanent degradation![]() | Danković, Danijel ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() | Article | 21M21 |
2015 | Analysis of recoverable and permanent components of threshold voltage shift in NBT stressed p-channel power VDMOSFET![]() | Danković, Danijel ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() | Article | 22M22 |
2015 | Annealing influence on recovery of electrically stressed power vertical double-diffused metal oxide semiconductor transistors![]() | Đorić-Veljković, Snežana ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() | Article | 22M22 |