| Issue Date | Title | Author(s) | Type | Мp-cat. |
| 2003 | Comparison between post-irradiation annealing and post-high electric field stress annealing of n-channel power VDMOSFETs | Ristic, Goran S   ; Pejovic, Momcilo M; Jaksic, Aleksandar B | Article | |
| 2002 | Memory effects in argon, nitrogen, and hydrogen | Pejovic, Momcilo M; Ristic, Goran S | Article | |
| 2002 | Electrical breakdown in low pressure gases | Pejovic, Momcilo M; Ristic, Goran S ; Karamarkovic, Jugoslav P | Article | |
| 2002 | Gamma-ray irradiation and post-irradiation responses of high dose range RADFETs | Jaksic, Aleksandar B; Ristic, Goran S ; Pejovic, Momcilo M; Mohammadzadeh, A; Sudre, C; Lane, W | Article | |
| 2002 | Influence of tube wall material type and tube temperature on the recombination processes of nitrogen ions and atoms in afterglow | Pejovic, Momcilo M; Ristic, Goran S ; Milosavljevic, Cedomir S; Pejovic, Milic M | Article | |
| 2002 | Characterisation of radiation response of 400 nm implanted gate oxide RADFETs | Jakšić, Aleksandar; Ristić, Goran ; Pejovic, Milić ; Mohammadzadeh, Ali; Lane, William | Conference Paper | |
| 2002 | Analysis of mechanisms which lead to electrical breakdown in argon using the time delay method | Pejovic, Momcilo M; Ristic, Goran S | Article | |
| 2000 | Post-irradiation behavior of commercial power VDMOSFETs | Jakšić, Aleksandar; Pejović, Momčilo ; Ristić, Goran | Conference Paper | |
| 2000 | New experimental evidence of latent interface-trap buildup in power VDMOSFETs | Jaksic, Aleksandar B; Ristic, Goran S ; Pejovic, Momcilo M | Article | |
| 2000 | Properties of latent interface-trap buildup in irradiated metal-oxide-semiconductor transistors determined by switched bias isothermal annealing experiments | Jaksic, Aleksandar B; Pejovic, Momcilo M; Ristic, Goran S | Article | |
| 2000 | Isothermal and isochronal annealing experiments on irradiated commercial power VDMOSFETs | Jaksic, Aleksandar B; Pejovic, Momcilo M; Ristic, Goran S | Article | |
| 2000 | Analysis of postirradiation annealing of n-channel power vertical double-diffused metal-oxide-semiconductor transistors | Ristic, Goran S ; Pejovic, Momcilo M; Jaksic, Aleksandar B | Article | |
| 2000 | Analysis of mechanisms which lead to electrical breakdown in a krypton-filled tube using the time delay method | Pejovic, Momcilo M; Ristic, Goran S | Article | |
| 2000 | Nitrogen-filled tube as a sensor of ionizing radiation | Pejovic, Momcilo M; Ristic, Goran S | Article | |
| 1998 | Numerical simulation of creation-passivation kinetics of interface traps in irradiated n-channel power VDMOSFETs during thermal annealing with various gate biases | Ristić, Goran ; Pejović, Momčilo ; Jakšić, Aleksandar | Article | |
| 1998 | Radijacioni i posleradijacioni efekti kod VDMOS tranzistora snage i PMOS dozimetrijskih tranzistora | Ristić, Goran S. | Doctoral theses | |
| 1998 | Modelling of kinetics of creation and passivation of interface traps in metal-oxide-semiconductor transistors during postirradiation annealing | Ristić, Goran ; Pejović, Momčilo ; Jakšić, Aleksandar | Article | |
| 1998 | The behaviour of radiation-induced gate-oxide defects in MOSFETs during annealing at 140°C | Pejović, Momčilo ; Jakšić, Aleksandar; Ristić, Goran | Article | |
| 1998 | Latent interface-trap generation in commercial power VDMOSFETs | Jakšić, Aleksandar; Pejović, Momčilo ; Ristić, Goran ; Raković, S. | Conference Paper | |
| 1997 | Processes in n-channel MOSFETS during postirradiation thermal annealing | Pejović, Momčilo ; Jakšić, Aleksandar; Ristić, Goran ; Baljošević, B. | Article | |
Ristić, Goran
